Date of Completion
5-5-2016
Embargo Period
5-4-2016
Advisors
Rajeev Bansal and Faquir Jain
Field of Study
Engineering
Degree
Master of Science
Open Access
Open Access
Abstract
This work provides a computational tool for predicting strain and dislocation density in nitride-based heterostructures at equilibrium. The framework and computational tool reviewed in this thesis has yielded critical layer thickness (CLT) results for nitride-based heterostructures such as InxGa1-xN/GaN (0001), InxGa1-xN/GaN (11-22) and AlxGa1-xN/GaN (0001). The presented CLT results are compared with calculations via established CLT models and empirical data. Dislocation density and strain profiles calculated for InxGa1-xN/GaN (0001) and InxGa1-xN/GaN (11-22) in linearly graded configurations are provided. These results demonstrate that with modification J. Tersoff’s zinc-blende based analysis of dislocation confinement to compositionally graded layers in multi-layer heterostructures is applicable to nitrides.
Recommended Citation
Raphael, Johanna, "Strain and Dislocations in Nitride-Based Heterostructures" (2016). Master's Theses. 907.
https://digitalcommons.lib.uconn.edu/gs_theses/907
Major Advisor
John E. Ayers